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| SMD Type Power Transistor 2SC3837K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High transition frequency. (Typ. fT = 1.5GHz) Small rbb'.Cc and high gain. (Typ. 6ps) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms. Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 18 3 50 0.2 150 -55 to +150 Unit V V V mA W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Collector-base time constant Noise factor Output capacitance * Transition frequency * Measured using pulse current. Symbol VCBO VCEO VEBO ICBO IEBO IC=10iA IC=1mA IE=10iA VCB=20V VEB=10V Testconditons Min 30 18 3 0.5 0.5 0.5 56 6 4.5 0.9 600 1500 1.5 180 13 ps dB pF MHz Typ Max Unit V V V A A V VCE(sat) IC/IB=20mA/4mA hFE rbb'.Cc NF Cob fT VCE=10V, IC=10mA VCB = 10V , IC = 10mA , f = 31.8MHz VCE=12V,IC=2mA,f=200MHz,Rg=50 VCB=10V, IE=0, f=1MHz VCE=10V, IE= 10mA, f=200MHz hFE Classification Marking Rank hFE 56 ACN N 120 82 ACP P 180 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn www.kesenes.com 1 |
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